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  • The IGBT or Insulated Gate Bipolar Transistor is indeed a hybrid MOSFET/BJT device. MOSFET's traditionally have low transconductance (gain). The old name for an IGBT is a GEMFET or Gain Enhanced MOSFET. As its name implies they have higher gain, but are a voltage controlled device (BJT are current controlled). Amplifier considerations: I have never seen a P-channel IGBT, just N-Channel, so you will need to design a dual N-Channel output. More options. It is said to occasionally consume human flesh, unlike interwetten com casino their close cousins, the Almastis . Some facts about IGBTs: - There are some IGBT models with positive temperature coefficient intended for direct paralleling, while most models have negative temperature coefficient and can't be paralleled without emitter resistors or some other current sharing aid. See SKP10N60 from Infineon for example. - All modern switching IGBTs feature square SOA, like MOSFETs.

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